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PBSS4112PANP NPN/NPN low VCEsat (BISS) transistor

PBSS4112PANP Description

PBSS4112PANP 29 November 2012 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.Product profile 1.1 General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

PBSS4112PANP Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High efficiency due to less heat generation
* AEC-Q1

PBSS4112PANP Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 500 mA; IB = 50 mA; pulsed; tp

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Datasheet Details

Part number
PBSS4112PANP
Manufacturer
NXP ↗
File Size
360.11 KB
Datasheet
PBSS4112PANP_NXP.pdf
Description
NPN/NPN low VCEsat (BISS) transistor

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NPN NPN low VCEsat BISS transistor NXP
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