PBSS4112PANP

NPN/NPN low VCEsat (BISS) transistor

NXP

* Very low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High collector current gain hFE at high IC

* Reduced Printed-Circuit Board (PCB) requirements

* High efficiency due to less heat generation

* AEC-Q1

PBSS4112PANP

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Npn/npn low vcesat (biss) transistor.

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PBSS4112PANP NPN NPN low VCEsat BISS transistor NXP

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