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PBSS4160PAN 1A NPN/NPN low VCEsat (BISS) transistor

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Description

PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1.General .
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High energy efficiency due to less heat generation

Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current

PBSS4160PAN Distributors

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