PBSS4130T Datasheet (NXP) - NPN low VCEsat (BISS) transistor

PBSS4130T, NPN low VCEsat (BISS) transistor

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.

PNP complement: PBSS5130T.

MARKING TYPE NUMBER PBSS4130T Note 1.

* = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS413

PBSS4130T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications. AP