PMH1200UPE P-channel MOSFET

nexperia

Description

PMH1200UPE 30 V, P-channel Trench MOSFET 6 February 2023 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package us.

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Datasheet Specifications

Part number: PMH1200UPE
Manufacturer: nexperia ↗
File Size: 273.92 KB
Datasheet: PMH1200UPE-nexperia.pdf
Description: P-channel MOSFET

Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V;

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