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PMH850UPE P-channel MOSFET

PMH850UPE Description

PMH850UPE 30 V, P-channel Trench MOSFET 6 February 2023 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package us.

PMH850UPE Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM

PMH850UPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -30 VGS gate-source voltage -8 -

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