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PMH550UNE N-channel MOSFET

PMH550UNE Description

PMH550UNE 30 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package us.

PMH550UNE Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

PMH550UNE Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V;

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