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PSMN0R9-30ULD - N-channel MOSFET

Description

SOT1023A with improved creepage and clearance to meet UL2595 requirements.

300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Features

  • Improved creepage and clearance.
  • meets the requirements of UL2595.
  • 300 A capability.
  • Avalanche rated, 100% tested at IAS = 190 A.
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
  • Superfast switching with soft-recovery; s-factor > 1.
  • Low spiking and ringing for low EMI designs.
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C.

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Datasheet Details

Part number PSMN0R9-30ULD
Manufacturer nexperia
File Size 263.29 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN0R9-30ULD Datasheet
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PSMN0R9-30ULD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.
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