* High reliability Power SO8 package, qualified to 175°C
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
* Ultra low Rdson and low parasitic inductance 3. Appl
PSMN1R0-30YLC Datasheet (748.38 KB)
PSMN1R0-30YLC
748.38 KB
N-channel mosfet.
PSMN1R0-30YLC N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology 15 January 2015 Product data sheet 1. General descrip.
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