* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* 160 A rated
* High reliability copper-clip bonded and solder die attach LFPAK33 package
* Qualified to 175
PSMN1R6-30MLH Datasheet (299.02 KB)
PSMN1R6-30MLH
299.02 KB
N-channel mosfet.
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 12 November 2019 Product data sheet 1. Gen.
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