PSMN4R0-40YS Datasheet - nexperia

PSMN4R0-40YS, N-channel MOSFET

PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Rev.02 * 12 July 2010 Product data sheet 1.Product profile 1.1 General d.
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.

Features

* Advanced TrenchMOS provides low RDSon and low gate charge
* High efficiency gains in switching power converters
* Improved mechanical and thermal characteristics

Applications

* DC-to-DC convertors
* Lithium-ion battery protection
* Load switching
* Motor control
* Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current Tmb = 2

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