PSMN6R0-30YLB Datasheet - nexperia

PSMN6R0-30YLB N-channel MOSFET

PSMN6R0-30YLB Features

* High reliability Power SO8 package, qualified to 175°C

* Low parasitic inductance and resistance

* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications

* DC-t

Datasheet Details

PSMN6R0-30YLB

910.59 KB

N-channel mosfet.

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