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PSMN6R0-30YLB N-channel MOSFET

PSMN6R0-30YLB Description

PSMN6R0-30YLB N-channel 30 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology Rev.2 * 24 October 2011 Product data sheet 1..
Logic level enhancement mode N-channel MOSFET in LFPAK package.

PSMN6R0-30YLB Features

* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

PSMN6R0-30YLB Applications

* DC-to-DC converters
* Load switching
* Synchronous buck regulator 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation T

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