PSMN6R9-100YSF

N-channel MOSFET

nexperia

PSMN6R9-100YSF Features

* Low Qrr for higher efficiency and lower spiking

* Qualified to 175 °C

* Low QG x RDSon FOM for high efficiency switching applications

* Strong avalanche energy rating (Eas)

* Avalanche rated and 100% tested

* Ha-free and RoHS compliant LFPAK56 packag

PSMN6R9-100YSF General Description

NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits

* Low Qrr for higher efficiency and lower spiking

* Qualified to 175 °C

* Low QG x RDSon FOM for high efficiency switching a.

PSMN6R9-100YSF Datasheet (288.31 KB)