* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications
* DC
PSMN9R5-30YLC Datasheet (881.07 KB)
PSMN9R5-30YLC
881.07 KB
N-channel mosfet.
PSMN9R5-30YLC
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 2
* 1 September 2011
Product data sheet
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