UF4C120053K3S Datasheet - onsemi

SiC Cascode JFET

UF4C120053K3S Features

* On-resistance RDS(on): 53 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery: Qrr = 117 nC

* Low Body Diode VFSD: 1.28 V

* Low Gate Charge: QG = 37.8 nC

* Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive

* Low Intrinsic Capacitance

UF4C120053K3S General Description

The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement”.

UF4C120053K3S Datasheet (426.91 KB)

UF4C120053K3S Datasheet Preview — Preview of UF4C120053K3S PDF

Datasheet Details

Part number:

UF4C120053K3S

Manufacturer:

onsemi

File Size:

426.91 KB

Description:

Sic cascode jfet.

📁 Related Datasheet

UF4C120070B7S SiC Cascode JFET (qorvo)

UF4001 1.0A ULTRAFAST DIODE (WON-TOP)

UF4001 400V 1A silicon rectifier (Invac)

UF4001 ULTRA FAST RECOVERY RECTIFIERS (Digitron Semiconductors)

UF4001 Ultrafast Plastic Rectifier (Vishay)

UF4001 ULTRA FAST RECTIFIER (Dc Components)

UF4001 (UF4001 - UF4007) Ultrafast Switching Si-Rectifiers (Diotec Semiconductor)

UF4001 Fast Rectifiers (Fairchild Semiconductor)

UF4001 Fast Rectifiers (NTE)

UF4001 ULTRAFAST EFFICIENT PLASTIC RECTIFIER (General Semiconductor)

TAGS

UF4C120053K3S SiC Cascode JFET onsemi

Image Gallery

UF4C120053K3S Features

UF4C120053K3S General Description

Datasheet Details

File Size:

Description:

UF4C120053K3S Distributor