UF4C120053K3S Datasheet (onsemi)

UF4C120053K3S, SiC Cascode JFET

The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement”

UF4C120053K3S Features

* On-resistance RDS(on): 53 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery: Qrr = 117 nC

* Low Body Diode VFSD: 1.28 V

* Low Gate Charge: QG = 37.8 nC

* Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive

* Low Intrinsic Capacitance