UF4C120053K3S Datasheet - onsemi

UF4C120053K3S SiC Cascode JFET

The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement”.

UF4C120053K3S Features

* On-resistance RDS(on): 53 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery: Qrr = 117 nC

* Low Body Diode VFSD: 1.28 V

* Low Gate Charge: QG = 37.8 nC

* Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive

* Low Intrinsic Capacitance

UF4C120053K3S Datasheet (426.91 KB)

UF4C120053K3S Datasheet Preview — Preview of UF4C120053K3S PDF

Datasheet Details

Part number:

UF4C120053K3S

Manufacturer:

onsemi

File Size:

426.91 KB

Description:

Sic cascode jfet.

📁 Related Datasheet

UF4C120070B7S SiC Cascode JFET (qorvo)

UF4001 1.0A ULTRAFAST DIODE (WON-TOP)

UF4001 400V 1A silicon rectifier (Invac)

UF4001 ULTRA FAST RECOVERY RECTIFIERS (Digitron Semiconductors)

UF4001 Ultrafast Plastic Rectifier (Vishay)

UF4001 ULTRA FAST RECTIFIER (Dc Components)

UF4001 (UF4001 - UF4007) Ultrafast Switching Si-Rectifiers (Diotec Semiconductor)

UF4001 Fast Rectifiers (Fairchild Semiconductor)

TAGS

UF4C120053K3S SiC Cascode JFET onsemi

UF4C120053K3S Distributor