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UF4C120053K3S SiC Cascode JFET

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Description

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 53 mohm UF4C120053K3S .
The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET.

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Datasheet Specifications

Part number
UF4C120053K3S
Manufacturer
onsemi
File Size
426.91 KB
Datasheet
UF4C120053K3S-onsemi.pdf
Description
SiC Cascode JFET

Features

* On-resistance RDS(on): 53 mW
* Maximum Operating Temperature of 175 C
* Excellent Reverse Recovery: Qrr = 117 nC
* Low Body Diode VFSD: 1.28 V
* Low Gate Charge: QG = 37.8 nC
* Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive
* Low Intrinsic Capacitance

Applications

* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating DATA SHEET www. onsemi. com TO247-3 15.90x20.96x5.03, 5.44P CASE 340AK MARKING DIAGRAM UF4C120053K3S AYYWW ZZZ UF4C120053K3S = Specific Device Code

UF4C120053K3S Distributors

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onsemi UF4C120053K3S-like datasheet