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UF4C120070B7S SiC Cascode JFET

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Description

DATASHEET UF4C120070B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 72 mohm Rev B, January 2025 .
D (Tab) Tab 1 7 G (1) KS (2) S (3-7) Part Number UF4C120070B7S Package D2PAK-7L Marking UF4C120070B7S The UF4C120070B7S is a 1200V, 72mΩ G4 Si.

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Datasheet Specifications

Part number
UF4C120070B7S
Manufacturer
qorvo
File Size
1.43 MB
Datasheet
UF4C120070B7S-qorvo.pdf
Description
SiC Cascode JFET

Features

* w On-resistance RDS(on): 72mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 101nC w Low body diode VFSD: 1.43V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and C

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Induction heating Datasheet: UF4C120070B7S Rev B, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avala

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