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UJ3D06530TS SiC Diode

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Description

Silicon Carbide (SiC) Diode * EliteSiC, TO220-2, 30 A, 650 V SiC Merged PiN-Schottky (MPS) Diode UJ3D06530TS .
onsemi offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes.

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Datasheet Specifications

Part number
UJ3D06530TS
Manufacturer
onsemi
File Size
344.16 KB
Datasheet
UJ3D06530TS-onsemi.pdf
Description
SiC Diode

Features

* 175 °C Maximum Operating Junction Temperature
* Easy Paralleling
* Extremely Fast Switching not Dependent on Temperature
* No Reverse or Forward Recovery
* Enhanced Surge Current Capability, MPS Structure
* Excellent Thermal Performance, Ag Sintered

Applications

* Power Converters
* Industrial Motor Drives
* Switch-mode Power Supplies
* Power Factor Correction Modules DATA SHEET www. onsemi. com 12 21 TO220-2 CASE 340AZ MARKING DIAGRAM UJ3D06530TS AYYWW ZZZ 1 2 UJ3D06530TS A YY WW ZZZ = Specific Device Code = Assembly Loc

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