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UJ3D1220KSD SiC Diode

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Description

Silicon Carbide (SiC) Diode * EliteSiC, TO247-3, 20 A, 1200 V SiC Merged PiN-Schottky (MPS) Dual Diode UJ3D1220KSD .
onsemi offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes.

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Datasheet Specifications

Part number
UJ3D1220KSD
Manufacturer
onsemi
File Size
306.91 KB
Datasheet
UJ3D1220KSD-onsemi.pdf
Description
SiC Diode

Features

* Maximum Operating Temperature of 175 °C
* Easy Paralleling
* Extremely Fast Switching not Dependent on Temperature
* No Reverse or Forward Recovery
* Enhanced Surge Current Capability, MPS Structure
* Excellent Thermal Performance, Ag Sintered

Applications

* Power Converters
* Industrial Motor Drives
* Switch Mode Power Supplies
* Power Factor Correction Modules DATA SHEET www. onsemi. com 123 321 TO247-3 CASE 340AK MARKING DIAGRAM UJ3D1220KSD AYYWW ZZZ 1 2 3 UJ3D1220KSD A YY WW ZZZ = Specific Device Code = Assemb

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