SVF1N60B Datasheet (sapcon) - N-CHANNEL MOSFET

SVF1N60B, N-CHANNEL MOSFET

sapcon® Absoolute Maximum Rantings (Tc=25℃) PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDSS 600 V Drain Current-continuous ID 0.5 A Drain Current-pulse Gate-Source Voltage IDM VGSS 2.0 ±30 A V Power Dissipation Junction Temperature Storage Temperature PD Tj TsTg 3.0 150 -55~+150 W ℃ ℃ SVF1N60B N-CHANNEL MOSFET Electronic Characteristics(Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN Typ MAX UNIT Drain-Source Voltage BVDSS ID=250uA;VGS=0V 600 - -V Z