SVF1N60AM Datasheet (Silan Microelectronics)

SVF1N60AM, 600V N-CHANNEL MOSFET

SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, p

SVF1N60AM Features

* ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF1N60AM SVF1N60AMJ SVF1N60ABTR SVF1N60AD SVF1N60ADTR SVF1N60AF SVF1N60AH Package TO-251D-3L TO-251J-3L TO-92-3L TO-252-2L TO-252-2L TO-220F-3