PE9926 N-Channel Enhancement Mode Power MOSFET

semi one

Description

PE9926 N-Channel Enhancement Mode Power MOSFET .
The PE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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PE9926 Datasheet Preview — Preview of PE9926 PDF

Datasheet Specifications

Part number: PE9926
Manufacturer: semi one
File Size: 774.74 KB
Datasheet: PE9926-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram
* High density cell design for ultra low Rdson

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N-Channel Enhancement Mode Power MOSFET semi one

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