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PE9926 - N-Channel Enhancement Mode Power MOSFET

PE9926 Description

PE9926 N-Channel Enhancement Mode Power MOSFET .
The PE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

PE9926 Features

* VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
PE9926
Manufacturer
semi one
File Size
774.74 KB
Datasheet
PE9926-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE9926-like datasheet