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ADM24N10E - N-Channel MOSFET

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Datasheet Details

Part number ADM24N10E
Manufacturer ADV
File Size 648.17 KB
Description N-Channel MOSFET
Datasheet download datasheet ADM24N10E Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADV ADM24N10E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 24A RDS(ON) (mΩ) 53mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.