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ADM25P06E - P-Channel MOSFET

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Part number ADM25P06E
Manufacturer ADV
File Size 659.29 KB
Description P-Channel MOSFET
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ADV ADM25P06E P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -26A RDS(ON) (mΩ) 35mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Thermal Characteristics Symbol Parameter RthJC Thermal resistance junction-case max RthJA Thermal resistance junction-ambient max 1. Pulse width limited by maximum junction temperature.
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