ADM25P06E
ADM25P06E is P-Channel MOSFET manufactured by ADV.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS -60V
ID -26A
RDS(ON) (mΩ) 35mΩ
TO252
1 2 3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter mon Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Maximum Junction Temperature
TSTG
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested⑴
Continuous Drain Current
Maximum Power Dissipation
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Thermal Characteristics
Symbol
Parameter
Rth JC Thermal resistance junction-case max Rth JA Thermal resistance junction-ambient max 1. Pulse width limited by maximum junction temperature.
Ratings
-60 ±20 150 -55 to 150 -26
-100 -26 -16 42 17
Ratings 3 50
Unit
V °C °C...