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ADM28P10E - P-Channel MOSFET

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Datasheet Details

Part number ADM28P10E
Manufacturer ADV
File Size 559.46 KB
Description P-Channel MOSFET
Datasheet download datasheet ADM28P10E Datasheet

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Full PDF Text Transcription

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ADV ADM28P10E P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -100V ID -28A RDS(ON) (mΩ) 76mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Thermal Characteristics Symbol Parameter RthJC Thermal resistance junction-case max RthJA Thermal resistance junction-ambient max 1. Pulse width limited by maximum junction temperature.
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