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ADM2P06W - P-Channel MOSFET

Description

The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved.

Features

  • Excellent Cdv/dt effect decline.
  • Super Low Gate Charge.
  • 100% EAS Guaranteed.
  • Advanced Trench technology.
  • Lead-Free,RoHS Compliant SOT223 1  1  2  2  3  3  2.

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Datasheet preview – ADM2P06W

Datasheet Details

Part number ADM2P06W
Manufacturer ADV
File Size 778.34 KB
Description P-Channel MOSFET
Datasheet download datasheet ADM2P06W Datasheet
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Full PDF Text Transcription

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                        ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.3A RDS(ON) (mΩ) 180mΩ Features: ● Excellent Cdv/dt effect decline ● Super Low Gate Charge ●100% EAS Guaranteed ● Advanced Trench technology ● Lead-Free,RoHS Compliant SOT223 1  1  2  2  3  3  2 Description: The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved.
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