ADV ADM2P06W
The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved.| Part No. | ADM2P06W |
|---|---|
| Datasheet | ADM2P06W Download |
| Manufacturer | ADV |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Excellent Cdv/dt effect decline
● Super Low Gate Charge
●100% EAS Guaranteed
● Advanced Trench technology
● Lead-Free,RoHS Compliant SOT223 1 1 2 2 3 3 2
DESCRIPTION
:ABSOLUTE MAXIMUM RATINGS
( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current（1,4） TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain
