ADM2P06W Overview
The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved. Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter mon Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction...
ADM2P06W Key Features
- Excellent Cdv/dt effect decline
- Super Low Gate Charge
- 100% EAS Guaranteed
- Advanced Trench technology
- Lead-Free,RoHS pliant