Datasheet Details
| Part number | ADM57N10 |
|---|---|
| Manufacturer | ADV |
| File Size | 887.86 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 ADM57N10 Datasheet
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| Part number | ADM57N10 |
|---|---|
| Manufacturer | ADV |
| File Size | 887.86 KB |
| Description | N-Channel MOSFET |
| Datasheet |
ADM57N10 Datasheet
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: The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2） ID Continuous Drain Current（1） PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C T
ADV ADM57N10 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 57A RDS(ON) (mΩ) 17mΩ.
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