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ADM90N03E - N-Channel MOSFET

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Part number ADM90N03E
Manufacturer ADV
File Size 761.21 KB
Description N-Channel MOSFET
Datasheet download datasheet ADM90N03E Datasheet

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ADV ADM90N03E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 90A RDS(ON) (mΩ) 4.0mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ TC=25°C ID Continuous Drain Current TC=25°C PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature. TC=25°C Thermal Characteristics Symbol Parameter RthJC RthJA Thermal resistance junction-case max Thermal resistance junction-ambient max Ratings 30 ±20 150 -55 to 150 90 200 90 62.