• Part: SSC8013GS6
  • Description: P-Channel Enhancement Mode MOSFET
  • Manufacturer: AFSEMI
  • Size: 196.55 KB
Download SSC8013GS6 Datasheet PDF
AFSEMI
SSC8013GS6
SSC8013GS6 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
P-Channel Enhancement Mode MOSFET - Features VDS VGS RDSon TYP 38mR@-4V5 - Applications - Load Switch - Portable Devices - DCDC conversion -12V ±8V 47mR@-2V5 -3.8A 61mR@-1V8 - Pin Configuration - General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. - Package Information D: Drain; G:...