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SSC8013GSB
P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP 38mR@-4V5
ID
Applications
Load Switch
Portable Devices DCDC conversion
-12V ±8V 47mR@-2V5 -5A 61mR@-1V8
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
D: Drain; G: Gate; S: Source
electrical capabilities.
Package Information
⑥ ⑤④
①②
③
Units:mm SOT23-6L
SSC-4V0
http://www.afsemi.
SSC8013GSB Datasheet
