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SSC8020GS6 - N-Channel Enhancement Mode MOSFET

General Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

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Key Features

  • s.
  • VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 750mA.
  • General.

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Datasheet Details

Part number SSC8020GS6
Manufacturer AFSEMI
File Size 147.45 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8020GS6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8020GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 750mA   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin configuration Top View  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.