Datasheet Details
| Part number | SSC8020GS6 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 147.45 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | SSC8020GS6-AFSEMI.pdf |
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Overview: SSC8020GS6 N-Channel Enhancement Mode MOSFET .
| Part number | SSC8020GS6 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 147.45 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | SSC8020GS6-AFSEMI.pdf |
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This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications Replace Digital Transistor Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Pin configuration Top View Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://.afsemi.
1/5 Analog Future SSC8020GS6 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Drain Current (Note 1) Continuous Pulsed ID 0.75 2 Power Dissipation Derating above TA = 25°C (Note 1) P
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