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SSC8020GS9 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: AFSEMI

Overview: SSC8020GS9 N-Channel Enhancement Mode MOSFET .

Datasheet Details

Part number SSC8020GS9
Manufacturer AFSEMI
File Size 120.69 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8020GS9-AFSEMI.pdf

General Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View  Package Information SSC-V1.0 http://.afsemi.

1/5 Analog Future SSC8020GS9  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Drain Current (Note 1) Continuous Pulsed ID 0.4 1.2 Power Dissipation Derating above TA = 25°C (Note 1) Pd 175 O

Key Features

  • s.
  • VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8.
  • 450mR@1V5.
  • General.

SSC8020GS9 Distributor