SSC8020GS9 Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications Replace Digital Transistor Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Top View...
SSC8020GS9 Key Features
- 450mR@1V5
- General Description