SSC8028GT3
SSC8028GT3 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS VGS
RDSon TYP
- Applications
- Desktop puter
- Notebook
20V ±16V
11m R@10V 16m R@4V5
12A
- Pin configuration
- General Description
Top View
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
- Package Information
SSC-V1.0 http://.afsemi. h // S i P
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
ID IDM
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
TJ, TSTG
- Electrical Characteristics @ TA = 25°C unless otherwise noted
Limit 20 ±16 12 30 2.5
-55 to 150
Unit V V A A W °C
Parameter
Symbol
Test Conditions
Drain- Source Breakdown...
