AFSEMI SSC8028GT8
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | SSC8028GT8 |
|---|---|
| Datasheet | SSC8028GT8 Download |
| Manufacturer | AFSEMI |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS VGS RDSon TYP ID●
APPLICATIONS
● Desktop Computer● Notebook 20V ±16V 11mR@10V 16mR@4V5 12A
● Pin configuration
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GENERAL DESCRIPTION
Top View● Package Information Units:mm SSC-V1.0 h // S i P 1/4 Analog Future SSC8028GT8
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ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) ID IDM Total Power Dissipation (Note 1) PD Operating and Storage Junction Temperature Range TJ, TSTG●
ELECTRICAL CHARACTERISTICS
@ TA = 25°C unless otherwise noted Limit 20 ±16 12 30 2.5 -55 to 150 Unit V V A A W °C Parameter Symbol Test Conditions Drain–Source Breakdow
