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SSC8033GS1
P-Channel Enhancement Mode MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 51mR@-10V 68mR@-4V5
ID -5.4A
Applications
Load Switch
DCDC conversion TFT panel power switch
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage application such as portable equipment,
power management and other battery powered circuits,
and low in-line power loss are needed in a very small
outline surface mount package.
Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.
SSC8033GS1 Datasheet
