SSC8033GS1
SSC8033GS1 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -30V
VGS ±20V
RDSon TYP 51m R@-10V 68m R@-4V5
ID -5.4A
- Applications
- Load Switch
- DCDC conversion
- TFT panel power switch
- Pin configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
- Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-1V0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1) Operating and Storage...
