SSC8033GS6 Overview
Description
Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, 12 and low in-line power loss are needed in a very small GS outline surface mount package.
