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SSC8033GS6 - P-Channel Enhancement Mode MOSFET

Description

on-state resistance.

Features

  • s.

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Datasheet Details

Part number SSC8033GS6
Manufacturer AFSEMI
File Size 548.95 KB
Description P-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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SSC8033GS6 P-Channel Enhancement Mode MOSFET  Features  Applications  TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 55mR@-10V 68mR@-4V5 ID -3A  High Side DC/DC Converter  High Side Driver for Brushless DC Motor  Portable DVD, DPF  Pin configuration  General Description Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, 12 and low in-line power loss are needed in a very small GS outline surface mount package.  Package Information SSC-1V1 http://www.afsemi.
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