Datasheet Summary
P-Channel Enhancement Mode MOSFET z Features
VDS -30V VGS
±20V z
RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.2A
Applications
¾ Load Switch
¾ DCDC conversion ¾ TFT panel power switch z Pin configuration
Top View z
General Description
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z
Package Information
1/4
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