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SSC8033GS3 - P-Channel Enhancement Mode MOSFET

Download the SSC8033GS3 datasheet PDF. This datasheet also covers the SSC8033GS3-SPIRIT variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Key Features

  • VDS -30V VGS ±20V z RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.2A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSC8033GS3-SPIRIT-SEMI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSC8033GS3
Manufacturer SPIRIT-SEMI
File Size 99.76 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8033GS3 Datasheet

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Other Datasheets by SPIRIT-SEMI

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSC8033GS3 P-Channel Enhancement Mode MOSFET z Features VDS -30V VGS ±20V z RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.2A Applications ¾ Load Switch ¾ DCDC conversion ¾ TFT panel power switch z Pin configuration Top View z General Description This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z Package Information 1/4 SSC-3V1 http://www.spirit-semi.com Free Datasheet http://www.nDatasheet.