SSC8034GS6
SSC8034GS6 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS VGS 30V ±12V
RDSon TYP 24m R@10V 27m R@4V5 39m R@2V5
ID 6A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
- Package Information
Applications
- Load Switch
- Portable Devices
- DCDC conversion
Pin configuration
Top View
D 3
12 GS
③
①②
SOT23
Units:mm
SSC-V1.0 http://.afsemi. h // S i P
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM PD TJ, TSTG
N-channel 30 ±12 6 30 850
-55 to +150
Unit V V A A m W °C
- Electrical...
