SSC8120GS8
SSC8120GS8 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS
RDSon TYP
ID ESD
310m R@4V5
20V ±12V 490m R@2V5 0.8A 1.2K
850m R@1V8
- - General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
- Package Information
Applications
- Replace Digital Transistor
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Cell Phones, Pagers Pin Configuration
Top View
DD 33
12 GS
1 S
Package:SOT523
Unit:mm
Dim Min
Typ Max
--
--
2 G
SSC-V1.0 http://.afsemi.
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