SSC8120GS9 Datasheet | AFSEMI

Features - VDS RDSon TYP ID ESD 300m R@4V5 20V ±12V 440m R@2V5 0.75A 1.2K 800m R@1V8 - - General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications - Replace Digital Transistor - Battery Operated Systems - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers Pin Configuration Top View - Package Information Package:SOT723 Unit:mm Dim Min Typ Max A 0.430 -- 0.500 A1 0.000 -- 0.050 b 0.170 -- 0.270 b1 0.270 -- 0.370 c 0.080 -- 0.150 D 1.150 -- 1.250 E 1.150 -- 1.250 E1 0.750 -- 0.850 e 0.800TYP θ 7°REF. SSC-V1.0 http://.afsemi. 1/6 Analog Future - Absolute Maximum Ratings @ TA = 25°C unless otherwise...