SSC8120GS9 Overview
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. 1/6 Analog Future SSC8120GS9 Ratings @ TA = 25°C unless otherwise.
SSC8120GS9 Key Features
- General Description