SSC8120GN1 - N-Channel Enhancement Mode MOSFET

General Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Applications Loa

Key Features

s VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 0.7A ESD 1.2K.
General.

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SSC8120GN1 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8120GN1
Manufacturer	AFSEMI
File Size	192.76 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8120GN1 Datasheet

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SSC8120GN1 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 0.7A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC Conversion  Pin configuration bottom View  Package Information SSC-1V0 DFN1006 1/5 http://www.afsemi.