SSC8120GN1
SSC8120GN1 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS 20V
VGS ±12V
RDSon TYP 310m R@4V5 490m R@2V5 850m R@1V8
ID 0.7A
ESD 1.2K
- General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
- Applications
- Load Switch
- Portable Devices
- DCDC Conversion
- Pin configuration bottom View
- Package Information
SSC-1V0
DFN1006
1/5 http://.afsemi.
- Order information Device
Package DFN1006
Marking
Shipping 10000/Tape&Reel
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
Power...
