SSC8120GS6 Datasheet | AFSEMI

Features VDS 20V VGS ±12V RDSon TYP 310m R@4V5 490m R@2V5 850m R@1V8 ID 1.2A ESD 1.2K - General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. - Applications - Load Switch - Portable Devices - DCDC Conversion - Pin configuration Top View - Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://.afsemi. 1/4 Analog Future - Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbol VDSS VGSS PD TJ, TSTG Ratings 20 ±12 1.2 3 250 -55 to +150 - Electrical Characteristics @ TA = 25°C...