SSC8124GS6B Datasheet | AFSEMI

Features VDS VGS RDSon TYP 22m R@4V5 - Applications - Load Switch - Portable Devices - DCDC Conversion 20V ±12V 25m R@2V5 32m R@1V8 6A - Pin configuration - General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. - Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://.afsemi. 1/5 Analog Future - Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction...