AFSEMI SSC8124GS6B
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.| Part No. | SSC8124GS6B |
|---|---|
| Datasheet | SSC8124GS6B Download |
| Manufacturer | AFSEMI |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS VGS RDSon TYP 22mR@4V5 ID●
APPLICATIONS
● Load Switch● Portable Devices
● DCDC Conversion 20V ±12V 25mR@2V5 32mR@1V8 6A
● Pin configuration
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GENERAL DESCRIPTION
Top View Excellent thermal and electrical capabilities.● Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 1/5 Analog Future SSC8124GS6B
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ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Te
