SSC8124GSB Datasheet (AFSEMI)

Part SSC8124GSB
Description N-Channel Enhancement Mode MOSFET
Category MOSFET
Manufacturer AFSEMI
Size 112.93 KB
AFSEMI

SSC8124GSB Overview

Description

This device is produced with high cell density DMOS Top View DD trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small 1D D outline surface mount package.

Key Features

  • VDS VGS RDSon TYP 22mR@4V5 ID