AFSEMI SSC8125GS6
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.| Part No. | SSC8125GS6 |
|---|---|
| Datasheet | SSC8125GS6 Download |
| Manufacturer | AFSEMI |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS VGS -20V ±8V RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5 ID ESD -4A 3kV●
APPLICATIONS
● Load Switch● Portable Devices
● DCDC Conversion
● Pin configuration Top View D
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GENERAL DESCRIPTION
● Package Information GS ③ ①② SOT23 Unit:mm SSC-1V0 1/4 Analog Future SSC8125GS6●
ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(1) Power Dissipation(1) Continuous Pulsed Junction and Storage Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings -20 ±8 -4 -20 450 -55 to +150●
ELECTRICAL CHARACTERISTICS
@ TA =
