SSC8125GS6A
SSC8125GS6A is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS VGS -20V ±8V
RDSon TYP 36m R@-4V5 45m R@-2V5 57m R@-1V8 66m R@-1V5
ID ESD -4A 3k V
- Applications
- Load Switch
- Portable Devices
- DCDC Conversion
- Pin configuration
Top View
- General Description
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.
- Package Information
SSC-1V0 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current(1) Power Dissipation(1)
Continuous Pulsed
Junction and Storage Temperature Range
Symbol VDSS VGSS
PD TJ, TSTG
Ratings -20 ±8 -4 -20 450
-55 to +150
- Electrical Characteristics @ TA = 25°C unless otherwise...
