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SSC8129GQ4 - P-Channel Enhancement Mode MOSFET

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Part number SSC8129GQ4
Manufacturer AFSEMI
File Size 798.17 KB
Description P-Channel Enhancement Mode MOSFET
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Description

Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. Package Information SSC-1V0 Package: DFN3X3 Symbol A A1 A3 D E D1 E1 k b e L Dimenions Millimeters Min.Max.0.700/0.800 0.800/0.900 0.000 0.050 0.203REF 2.924 3.076

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