SSC8129GQ4
SSC8129GQ4 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -20V
VGS ±12V
RDSon TYP 9m R@-4V5V 13m R@-2V5
ID -18A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
SSC-1V0
Package: DFN3X3
Symbol
A A1 A3 D E D1 E1 k b e L
Dimenions Millimeters
Min. Max.
0.700/0.800 0.800/0.900
0.203REF
0.650TYP
0.476 http://.afsemi.
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