SSC8129GS1 Datasheet (AFSEMI)

Part SSC8129GS1
Description P-Channel Enhancement Mode MOSFET
Category MOSFET
Manufacturer AFSEMI
Size 804.57 KB
AFSEMI

SSC8129GS1 Overview

Description

Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.