SSC8129GS1
SSC8129GS1 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -20V
VGS ±12V
RDSon TYP 10m R@-4V5V 13m R@-2V5
ID -18A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-1V0 http://.afsemi.
1/5
Analog Future
Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
PD TJ, TSTG
Limit -20 ±12...
