SSC8129GS1 datasheet by AFSEMI.
| Part number | SSC8129GS1 |
|---|---|
| Datasheet | SSC8129GS1-AFSEMI.pdf |
| File Size | 804.57 KB |
| Manufacturer | AFSEMI |
| Description | P-Channel Enhancement Mode MOSFET |
|
|
Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://.afsemi.
| Part Number | Description |
|---|---|
| SSC8129GQ4 | P-Channel Enhancement Mode MOSFET |
| SSC8120GN1 | N-Channel Enhancement Mode MOSFET |
| SSC8120GS6 | N-Channel Enhancement Mode MOSFET |
| SSC8120GS8 | N-Channel Enhancement Mode MOSFET |
| SSC8120GS9 | N-Channel Enhancement Mode MOSFET |
| SSC8121GN1 | P-Channel Enhancement Mode MOSFET |
| SSC8124GS6B | N-Channel Enhancement Mode MOSFET |
| SSC8124GSB | N-Channel Enhancement Mode MOSFET |
| SSC8124GT3 | N-Channel Enhancement Mode MOSFET |
| SSC8124GT8 | N-Channel Enhancement Mode MOSFET |
