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SSC8330GQ4 - Dual N-Channel Enhancement Mode MOSFET

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Part number SSC8330GQ4
Manufacturer AFSEMI
File Size 1.62 MB
Description Dual N-Channel Enhancement Mode MOSFET
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Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch or in PWM applications. Package Information SSC-1V0 Package: DFN3X3-8L http://www.afsemi.com 1 / 11 Analog Future SSC8330GQ4 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 VGS@10V TC = 25°C Continuous Drain Current 1 VGS@10V TC = 1

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