SSCP005GN3 Datasheet (AFSEMI)

Part SSCP005GN3
Description High Frequency High Gain PNP Power BJT
Manufacturer AFSEMI
Size 455.37 KB
AFSEMI

SSCP005GN3 Overview

Description

This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.

Key Features

  • PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A