SSCP005GS3 datasheet by AFSEMI.
| Part number | SSCP005GS3 |
|---|---|
| Datasheet | SSCP005GS3-AFSEMI.pdf |
| File Size | 149.17 KB |
| Manufacturer | AFSEMI |
| Description | High Frequency High Gain PNP Power BJT |
|
|
This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
| Part Number | Description |
|---|---|
| SSCP005GSB | High Frequency High Gain PNP Power BJT |
| SSCP005GN3 | High Frequency High Gain PNP Power BJT |
| SSC2314GS6A | N-Channel Enhancement Mode MOSFET |
| SSC5918 | One Cell Lithium-ion/Polymer Battery Protection IC |
| SSC5919 | High precision lithium battery protection control core |
| SSC5920 | High precision built-in MOSFET lithium battery protection circuit |
| SSC7002EGS6 | N-Channel Enhancement Mode MOSFET |
| SSC8013GS6 | P-Channel Enhancement Mode MOSFET |
| SSC8013GSB | P-Channel Enhancement Mode MOSFET |
| SSC8015GS6 | P-Channel Enhancement Mode MOSFET |
