AGM12N10A Overview
Description
The AGM12N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Product Summary This device is ideal for load switch and battery protection applications.
Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching PDFN5*6 - Low - 100% Avalanche tested
- 100% DVDS tested
